Nonlinear Source and Drain Resistance in Recessed-Gate Heterostructure Field-Effect Transistors - Electron Devices, IEEE Transactions on
نویسنده
چکیده
We have profiled the parasitic source and drain resistances versus current in recessed-gate HFET's with heavily-doped caps, using an InAIAs/n+-InP HFET as a vehicle. We observe a dramatic reduction in the parasitic resistances at moderate-to-high currents as significant current passes through the cap. Consequently, we note very little dependence in gm on the length of the extrinsic gate-source region. This is an experimental verification of predictions of two-layer models in the literature.
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